商先创公司已经开发出c.ACTIVATOR 150高温炉生产线，用于碳化硅（SiC）或氮化镓（GaN）器件的离子注入后退火。c.ACTIVATOR 150有各种各样的版本可供作为研发与系列生产加热炉使用，具有很高的工艺灵活性。
- High activation rate
- Minimal surface roughness
- Temperatures up to 2000°C
- Processing of wafer sizes from 2“ to 150 mm
- Batch size 5 or 50 wafers
- Heating rate up to 100 K/min
The hole sheet density Ns increases with annealing temperature almost linear from 1650°C all the way up to 2050°C.
The el. activation grade at room temperature increases from 0.28% to 3.7% by factor ~13 with an implanted dose of 3x1015cm2.
3.7% el. activation at room temperature is close to the maximum obtained if all Al atoms are on SiC lattice sites.
At the same time the hole mobility decreases from 18cm2/Vs to 10cm2/Vs by factor 1.8.
The lower mobilities are probably caused by scattering on the ionized Al atoms which have energy levels ~0.22 eV above the VB.
The sheet resistance was calculated by multiplication of the Hall mobility and sheet hole concentration.
It decreases from 41000 Ohm/sq to 6000 Ohm/sq by factor 6.8.
Annealing temperatures up to 1950 °C are clearly beneficial to reduce Rs. If high carrier concentrations are more important than high mobilities, as required to achieve low contact resistances, very high annealing temperatures even above 1950 °C can be desirable.